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A Product Line of
Diodes Incorporated
ZXMN3A14F
Maximum Ratings @T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
(Note 5)
Symbol
V DSS
V GS
Value
30
±20
3.9
Units
V
V
Continuous Drain Current
V GS = 10V
T A = 70°C
(Note 5)
I D
3.2
A
(Note 4)
3.2
Pulsed Drain Current (Note 6)
Continuous Source Current (Body Diode) (Note 5)
Pulsed Source Current (Body Diode) (Note 6)
I DM
I S
I SM
18
2.3
18
A
A
A
Thermal Characteristics @T A = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 4)
Linear Derating Factor
Power Dissipation (Note 5)
Linear Derating Factor
Thermal Resistance, Junction to Ambient (Note 4)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Leads (Note 7)
Operating and Storage Temperature Range
Symbol
P D
P D
R θ JA
R θ JA
R θ JL
T J, T STG
Value
1
8
1.5
12
125
83
70.44
-55 to +150
Unit
W
mW/°C
W
mW/°C
°C/W
°C/W
°C/W
°C
Notes:
4. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
5. For a device surface mounted on FR4 PCB measured at t ≤ 5 secs.
6. Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300 μ s - pulse current limited by maximum junction temperature.
7. Thermal resistance from junction to solder-point (at the end of the drain lead).
ZXMN3A14F
Document Number DS33536 Rev. 2 - 2
2 of 8
www.diodes.com
April 2012
? Diodes Incorporated
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